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| SFH612A/ SFH655A Vishay Semiconductors Optocoupler, Photodarlington Output Features * * * * High Isolation Test Voltage 5300 VRMS Standard Plastic DIP-4 Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A1 C2 i179057 4C 3 Agency Approvals * UL - File No. E52744 System Code H or J * BSI IEC60950 IEC60065 E e3 Order Information Part SFH612A SFH655A SFH655A-X009 Remarks CTR > 200 %, DIP-4 CTR > 600 %, DIP-4 CTR > 600 %, SMD-4 (option 9) Pb Pb-free Description The SFH612A and SFH655A are optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington detector. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Forward continuous current Surge forward current Derate linearly from 25 C Power dissipation Pdiss tp 10 s Test condition Symbol VRM IF IFSM Value 6.0 60 2.5 1.33 100 Unit V mA A mW/C mW Document Number 83667 Rev. 1.4, 26-Oct-04 www.vishay.com 1 SFH612A/ SFH655A Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector (load) current Derate linearly from 25 C Power dissipation Pdiss Test condition Symbol BVCEO BVECO IC Value 55 6.0 125 2.00 150 Unit V V mA mW/C mW Coupler Parameter Derate linearly from 25 C Total power dissipation t = 1.0 s Isolation test voltage between input and output, climate acc. to IEC 60068-1:1988 Creepage distance Clearance Comparative tracking index acc. to DIN IEC 112/VDE 0303, part 1:06-84 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Operating temperature range Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Ptot VISO Test condition Symbol Value 3.33 250 5300 Unit mW/C mW VRMS 7.0 7.0 175 mm mm 1012 1011 - 55 to + 150 - 55 to + 100 260 C C C Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 6.0 V VR = 0, f = 1.0 MHz Symbol VF IR CO Min Typ. 1.15 0.02 14 Max 1.5 10 Unit V A pF Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter dark current Collector-emitter capacitance Test condition ICE = 100 A IEC = 10 A VCE = 40 V VCE = 0 V, f=1.0 MHz Symbol BVCEO BVECO ICEO CCE Min 55 6.0 12 13.5 400 Typ. Max Unit V V nA pF www.vishay.com 2 Document Number 83667 Rev. 1.4, 26-Oct-04 SFH612A/ SFH655A Vishay Semiconductors Coupler Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 1.0 mA, IC = 2.0 mA IF = 20 mA, IC = 5.0 mA VI-O = 0 V, f = 1.0 MHz Part SFH612A SFH655A Symbol VCEsat VCEsat CC 0.45 Min Typ. Max 1.0 1.0 Unit V V pF Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 1.0 mA, VCE = 2.0 V Part SFH612A SFH655A Symbol CTR CTR Min 200 600 Typ. Max Unit % % Switching Characteristics Parameter Turn-on time (Fig. 10, Test Circuit 1) Turn-off time (Fig. 10, Test Circuit 1) Rise time (Fig. 10, Test Circuit 1) Fall time (Fig. 10, Test Circuit 1) Turn-on time (Fig. 11, Test Circuit 2) Turn-off time (Fig. 11, Test Circuit 2) Rise time (Fig. 11, Test Circuit 2) Fall time (Fig. 11, Test Circuit 2) Test condition VCC = 10 V, IC = 2.0 mA, RL = 100 VCC = 10 V, IC = 2.0 mA, RL = 100 VCC = 10 V, IC = 2.0 mA, RL = 100 VCC = 10 V, IC = 2.0 mA, RL = 100 VCC = 2.0 V, IC = 10 mA, RL = 100 VCC = 2.0 V, IC = 10 mA, RL = 100 VCC = 2.0 V, IC = 10 mA, RL = 100 VCC = 2.0 V, IC = 10 mA, RL = 100 Part SFH612A SFH612A SFH612A SFH612A SFH655A SFH655A SFH655A SFH655A Symbol ton toff tr tf ton toff tr tf Min Typ. 16 15 14 14 31 55 27 56 250 200 Max Unit s s s s s s s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.5 1.4 Forward Voltage (V) 1.00 0.95 0.90 -40C VCEsat (V) IF = 20 mA, IC = 5.0 mA 1.3 1.2 1.1 1.0 0.9 25C 0.8 0.7 0.01 0.10 0C 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 -40 isfh612a_02 75C 1.00 10.00 100.00 -20 0 20 40 60 80 100 isfh612a_01 Forward Current, IF (mA) Temperature, TA (C) Figure 1. Forward Voltage vs. Forward Current Figure 2. Collector Emitter Saturation Voltage vs. Temperature Document Number 83667 Rev. 1.4, 26-Oct-04 www.vishay.com 3 SFH612A/ SFH655A Vishay Semiconductors 1.2 IF = 1.0 mA, VCE = 2.0 V Normalized CTR 120 100 80 I C (mA) IF=10 mA 1.0 60 40 20 IF=5 mA IF=1 mA IF=0.5 mA 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.8 0.6 -40 isfh612a_03 0 -20 0 20 40 60 80 100 isfh612a_06 Temperature, TA (C) VCEsat (V) Figure 3. Normalized CTR vs. Temperature Figure 6. Collector Current vs. Collector-Emitter Saturation Voltage 1.80 1.60 1.40 Normalized CTR ICEO (nA) 104 IF = 1.0 mA, VCE = 2.0 V, 103 102 10 1.0 0.1 0 isfh612a_07 100 C 75 C 50 C 25 C 0 C -25 C -25 C 1.20 1.00 0.80 0.60 0.40 0.20 0.00 0.01 0.1 1.0 Forward Current, IF (mA) 10 100 10 20 30 V (V) CE 40 50 60 isfh612a_04 Figure 4. Normalized CTR vs. Forward Current Figure 7. Collector-Emitter Dark Current vs. Collector-Emitter Voltage over Temperature 1000.0 IF=10 mA IF=5 mA IF=2 mA IC (mA) Time Switching, s 10 3 IC = 2.0 mA, VCC = 10 V (SFH612A) IF=1.5 mA 100.0 10.0 IF=0.5 mA 1.0 IF=1 mA 10 2 T on Toff Trise Tfall 0.1 0 isfh612a_05 1 2 3 4 5 VCE (V) 6 7 8 9 10 isfh612a_08 10 102 103 Load Resistance, RL (ohm) 104 Figure 5. Collector Current vs. Collector Emitter Voltage Figure 8. Switching Time vs. Load Resistor www.vishay.com 4 Document Number 83667 Rev. 1.4, 26-Oct-04 SFH612A/ SFH655A Vishay Semiconductors 10 IC = 10 mA, VCE = 2.0 V (SFH655A) Time Switching, s 10 2 tfall toff ton 100 10 2 isfh612a_09 trise 10 3 Load Resistance, RL () 10 4 Figure 9. Switching Time vs. Load Resistor IF VCC IF VO VOUT tR t ON tOFF 90% 10% tF RE Circuit 1 isfh612a_10 Waveform 1 Figure 10. Switching Time Test Circuit and Waveforms VCC IF RL VCE 10% 90% tR tON Input Pulse Output Pulse tF tOFF Circuit 2 isfh612a_11 Waveform 2 Figure 11. Switching Time Test Circuit and Waveforms Document Number 83667 Rev. 1.4, 26-Oct-04 www.vishay.com 5 SFH612A/ SFH655A Vishay Semiconductors Package Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) ISO Method A 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3-9 .300 (7.62) typ. .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) i178027 .008 (.20) .012 (.30) Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .0040 (.102) .0098 (.249) .020 (.51) .040 (1.02) .012 (.30) typ. .315 (8.00) min. 15 max. 18449 www.vishay.com 6 Document Number 83667 Rev. 1.4, 26-Oct-04 SFH612A/ SFH655A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83667 Rev. 1.4, 26-Oct-04 www.vishay.com 7 |
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